Laser bars and chips
MOCVD, a vapor-phase epitaxy, is based on delivery of initial components of epitaxial layers in form of highly volatile elementary substances or compounds via a carrier gas flow into a growth zone. These materials induced thermally or else decompose in the reactor and interact chemically, while desired components deposit on a substrate which serves as a basis of a semiconductor device.
ASTRUM LT offers CONTRACT R&D:
CUSTOM MOCVD EPITAXY
CUSTOM LASER DIODE BARS
Custom wavelength
CW or QCW, up to 200W
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MOCVD technology offers a number of advantages:
- Exceptionally high quality of layers: higher growth rate at high doping uniformity and consistency.
- High yield: no need for ultra-high vacuum allows for better up-time.
- Flexibility: growth of various materials and during the same process run.
- Growth of multi quantum wells structures (MQW structures).
CUSTOM LASER DIODE BARS
Custom wavelength
CW or QCW, up to 200WMOCVD CAPABILITIES
AlGaInP/GaAs LED, lasers 635 – 780nm automotive industry, street lights, DVD, displays
AlGaAs/GaAs lasers 780 – 1060nm CD, telecommunication, high power lasers
AlInAs/GaInAs/InP LED, lasers 1300 – 1600nm IR - diodes, high power optical modulesMOCVD CAPACITIES
AIXTRON with configurations of 2", 3", or 4” wafers
Doping concentration from 1E13cm-3 to 1E20cm-3IN-HOUSE MOCVD CHARACTERIZATION
Surface defects mapping
X-ray diffraction
ECV profiling
Wafer photoluminescence (PL) mapping
Scanning Electron Microscopy (SEM)